High Quality Mono 156.75 Solar Cells 4bb
- Minimal order
- 100 pieces
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Product Specifications
Type
Poly
Product Description
Flagsun's manufacturing covers the photovoltaic value chain from ingot casting and wafering through solar cell production and solar panel assembly.All the cell is with most strict quality standard in every production process .
Features:
Performance and Quality
Industry-Leading Efficiency on P-type Monocrystalline Silicon Solar cell
Robust Reliability Performance for Potential Mudule Benefit Beyond 25 years
Compatible with Present Module Manufactureing Process
PID Resistant Confirmed by All Major Customers and testing Labs
100% In-line Optical and Electrical Inspection
Mono-Crystalline Silicon Solar Cell 4BB
Physical Characteristics
Dimension 156.75mm*156.75mm ± 0.25mm
Thickness wafer(si):205um+30um
Front(-) Four 1.0 mm silver busbar Silicon nitride anti-reflection coating
Back(+) Full surface aluminum back surface field 2.1mm(silver) discontinuous soldering pads.
Data under standard testing conditions(STC):1000W/Sq.M, AM1.5, 25ºC
Electrical characteristics
Efficiency | W(Pmpp) | V(Umpp) | A(Impp) | V(Uoc) | A(Isc) |
20.90-21.00 | 5.06 | 0.557 | 9.007 | 0.653 | 9.688 |
20.80-20.90 | 5.04 | 0.556 | 9.062 | 0.652 | 9.683 |
20.70-20.80 | 5.02 | 0.554 | 9.055 | 0.651 | 9.684 |
20.60-20.70 | 4.99 | 0.552 | 9.033 | 0.651 | 9.672 |
20.50-20.60 | 4.97 | 0.55 | 9.002 | 0.65 | 9.673 |
20.40-20.50 | 4.94 | 0.548 | 9.012 | 0.649 | 9.674 |
20.30-20.40 | 4.92 | 0.546 | 9.009 | 0.649 | 9.655 |
20.20-20.30 | 4.89 | 0.543 | 9.012 | 0.648 | 9.634 |
20.10-20.20 | 4.87 | 0.541 | 8.998 | 0.648 | 9.617 |
20.00-20.10 | 4.85 | 0.54 | 8.977 | 0.647 | 9.6 |
Physical characteristics:
PACKAGE: 100 PCS /Box
-12 Boxes/CTN
-1200 PCS/CTN
-Gross Weight: 16.8 kg /CTN
- CTN size: 45*25*25mm
Solar Cell Production Line
Cleaning & Texturing: Wafers are cleaned with industrial soaps and form square-based pyramids also called texture. The texturization helps to reduce the reflection of sunlight.
Diffusion: Wafers that have been pre-droped with boron during the casting process are then given a negative(n-type) surface characteristic by diffusing them with a phosphorus source at high temperature, which in turn creats the negative/positive(n-p) junction.
Etching: Phosphorus diffuses not only into the desired wafer surface but also into the side and the opposite surface to form PN. This gives a shunt path between the cell front and rear. Removal of the path around the wafer edge/edge junction isolation is named etching.
PECVD: By PECVD equipment, the wafers are coated with anti-reflection coating(ARC). It's the blue silicion nitride film to reduce reflection and promote absorption of light.
Printing & Heating: it was adopted by printing paste with screen technology to print the electrodes of silicion solar, and form a good ohmic contact.
Testing & Sorting: It means classifying the cells according to their efficiency tested under the simulated sunlight.
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